band switching diodes BA782-V, ba783-v vishay semiconductors document number: 85708 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.4, 05-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs08/3k per 7" reel (8 mm tape), 15k/box features ? these diodes are also available in sod-323 case with the type designations ba782s-v and ba783s-v ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec description silicon epitaxial planar diode switches for electric bandswitching in radio and tv tuners in the frequency range of (50 to 1000) mhz. the dynamic forward resistance is constant and ve ry small over a wide range of frequency and forward current. the reverse capacitance is also small and largely independent of the reverse voltage. 17431 parts table part ordering code type marking remarks BA782-V BA782-V-gs18 or BA782-V-gs08 r2 tape and reel ba783-v ba783-v-gs18 or ba783-v-gs08 r3 tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test conditions symbol value unit reverse voltage v r 35 v forward continuous current i f 100 ma thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction temperature t j 125 c storage temperature range t stg - 55 to + 150 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 20 v i r 50 na diode capacitance f = 1 mhz, v r = 1 v c d1 1.5 pf f = 1 mhz, v r = 3 v BA782-V c d2 1.25 pf ba783-v c d2 1.2 pf dynamic forward resistance f = (50 to 1000) mhz, i f = 3 ma BA782-V r f1 0.7 ba783-v r f1 1.2 f = (50 to 1000) mhz, i f = 10 ma BA782-V r f2 0.5 ba783-v r f2 0.9 series inductance across case l s 2.5 nh www.datasheet.co.kr datasheet pdf - http://www..net/
BA782-V, ba783-v vishay semiconductors band switching diodes document number: 85708 for technical ques tions within your region, please contact one of the following: www.vishay.com rev. 1.4, 05-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 2 typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - diode capacitance fig. 2 - dynam ic forward resistance vs. forward current package dimensions in millimeters (inches): sod-123 t j = 25 c f = 1 mhz 1 8 79 8 110 0.1 0. 8 0.6 0.4 1.4 1.2 1.0 0.2 0 100 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 2.0 1. 8 1.6 r f - dynamic for w ard resistance ( ) 1 10 0.1 1100 10 1 8 799 i f - for w ard c u rrent (ma) ba7 8 2- v 100 mhz ba7 8 3- v 100 mhz ba7 8 2- v , ba7 8 3- v 1 khz t am b = 25 c 0.1 (0.004) max. 2. 8 5 (0.112) 2.55 (0.100) 3. 8 5 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.09 8 ) 0. 8 5 (0.033) 0. 8 5 (0.033) 0. 8 5 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.01 8 ) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.00 8 ) 0 to 8 0.45 (0.01 8 ) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s 8 - v -3910.01-001 (4) 17432 www.datasheet.co.kr datasheet pdf - http://www..net/
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